Chemical Vapor Phase Synthesis Of Boron Nitride

In 1979, Sokolowski successfully used pulsed plasma technology to prepare cubic boron nitride (CBN) films at low temperature and low pressure. The equipment used is simple and the process is easy to realize, so it has been developed rapidly. A variety of vapor deposition methods have emerged. Traditionally speaking, it mainly refers to thermal chemical vapor deposition. The experimental device is generally composed of a heat-resistant quartz tube and a heating device. The substrate can be heated by a heating furnace (hot-wall CVD) or high-frequency induction heating (cold-wall CVD). The reaction gas decomposes on the surface of the high-temperature substrate, and at the same time, a chemical reaction occurs to deposit a film. The reaction gas is a mixed gas of BCl₃ or B₂H₄ and NH₃.