The Thunderous Silicon Carbide

In the past two years, the third-generation semiconductor material silicon carbide (SiC) blowing very loud, like thunder. Last year, some media will be 2021 as "silicon carbide explosion year". This year, there are people will be 2022 as "silicon carbide power chip applications of the new year", I do not know whether next year will be able to come up with new slogans (here refer to "the 21st century is the century of biology"). The capital market is also the wind, and silicon carbide rubbing a little edge of the subject are rocketing up.

SiC is the most suitable material for power devices.

Semiconductor materials composed of silicon has changed our lives, I believe that in the future for a long time, silicon semiconductor will still be the mainstream. During the development of silicon materials for decades, some problems have been encountered, and many people have tried to replace it with different materials. Semiconductor materials have also developed three generations. Silicon carbide is the third generation of semiconductor materials. As SiC has a wide forbidden band width, which leads to material properties such as high breakdown electric field strength. Benefiting from the material properties of SiC, SiC power devices have advantages such as high voltage resistance, small size, low power consumption, and high temperature resistance.

This advantage is mainly reflected in the power devices. Based on the aforementioned characteristics, the same specifications of the SiC-MOSFET compared to Si-MOSFET, on-resistance is reduced to 1/200, the size is reduced to 1/10; the same specifications of the use of SiC-MOSFET inverter and the use of Si-IGBT compared to the total energy loss is less than 1/4.

Power devices are one of the important basic components of the power electronics industry, widely used in electric power equipment, power conversion and circuit control and other fields, is an indispensable core semiconductor products in the industrial system. The rapid growth of new energy vehicles for power devices has brought a broad space for development. Silicon carbide MOSFET to replace silicon-based IGBT is the trend.

SiC-MOSFET has low on-resistance and low switching loss, which is more suitable for application in high-frequency circuits. In the new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS and other fields have a wide range of applications.
About silicon carbide, we still have a few points to be clear.

First, SiC is not a full replacement for silicon. The advantages of silicon carbide are high-pressure resistance, high temperature resistance, low energy loss, but these advantages are not reflected in consumer electronics products. On the contrary, SiC wafers are difficult to prepare, the cost is too high, and etching is difficult, so it can not fully replace the silicon material.

Secondly, the performance of silicon carbide and gallium nitride have their own focus, different application areas. SiC focuses on high-voltage, GaN focuses on high-frequency, the two materials do not have much competitive attributes, and application scenarios are not the same.

In addition, even SiC's advantageous field - power devices, SiC is not a dominant, silicon-based IGBT is not impossible to use.

Shengyang New Materials Co., Ltd. is committed to producing silicon carbide and silicon carbide processing products, and can customize various silicon carbide components according to customer needs. If necessary, please contact us.
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