SILICON CARBIDE TRAY
Applications: ICP etching process for epitaxial layer thin film materials (GaN, SiO2, etc.) for LED wafer cores, semiconductor diffusion using precision ceramic parts, and MOCVD epitaxial process for semiconductor wafers. Silicon carbide ceramic trays are made of high-purity, unpressurized sintered silicon carbide ceramic material, which has the advantages of high hardness, wear resistance, high thermal conductivity, high-temperature mechanical stability, and corrosion resistance, as well as high precision and uniformity of wafer epitaxial layer etching.
Description
SiC trays have many advantages compared to other types of trays. First of all, their high thermal conductivity makes them ideal for heat treatment processes, such as sintering and brazing. They can withstand temperatures up to 1650°C without warping or degrading, which means they can be used in harsh environments where other materials would fail.
Secondly, silicon carbide trays are chemically inert and do not react with most chemicals, including acids, bases, and salts. This feature makes them ideal for use in the chemical and pharmaceutical industries, where harsh chemicals are often used.
Thirdly, SiC trays are highly abrasion-resistant and have a low coefficient of thermal expansion. This makes them ideal for use in high-temperature furnace applications where parts need to fit well and not expand or contract due to thermal changes.
